series of IMPATT diodes are silicon double drift diodes
mounted in hermetically sealed packages and supplied
mounted to a copper heat sink. Standard products are
offered with power outputs tested in specific frequency
diode products for millimeter-wave applications are
realized on the basis of the symmetrical double-drift
structure... The layers in double-drift diodes are:
a heavily doped (p+)-region, a moderately doped p-region,
a moderately doped n-region, and a heavily doped (n+)-region.
The (p+)- and (n+)- regions allow ohmic electrical contacts
to be made to the external circuit. Two p- and n-layers
are grown in sequence on a low resistivity (n+) arsenic
doped silicon substrate by vapor-phase low-pressure
epitaxy. This technique provides sharp grading profiles
at both the (p+)- and (n+)-interfaces and at the p-n-junction.
then 10 years history of application of the same diodes
coupled with failure analysis has enabled us to achieve
very high mean-time-to-failure (MTBF) rates.A microwave
cavity test fixture is offered for both CW and pulsed
IMPATT diodes. Purchase enables the user to verify ELVA-1
IMPATT Diode Specifications
IMPATT Diode Specifications
width is 50-100 nS, repetition rate is not more then 100 kHz.
fixture for the testing of IMPATT Diodes for 150 GHz is
designed as a coaxial- waveguide transition. IMPATT Diode
(1) is installed into the coaxial line, that crosses a
waveguide cavity. Output of the cavity is a waveguide
WR-6 with 387/U-M flange. Movable short circuit is installed
on the other side of the cavity. The biasing current is
applied by means of a central wire of the coaxial line
(6). The construction of the test fixture allows to adjust
the position of the diode in respect to the waveguide
using an adjustment screw (7). The central coaxial wire
is movable. There is a spring (8), that keeps a contact
between the wire and the Diode during the adjustment.
After the adjustment the Diode position should be fixed
by means of the fixing screw (3). Adjustment of the frequency
and output power should be carried out by means of two
screws: micro-metric screw, that moves the short circuit,
and the screw, that changes the position of the diode.
The microwave test fixture are supplied with biasing current
stabilizer to provide a reliable, trouble-free operation.
and Power Pulse Shape for 20W Pulse Diodes in.Amplification
frequency is 94GHz.
is measured by means of fast detector.
power is >20W.
we propose power supply for CW and pulsed Test Fixture 110
VAC, 60 Hz, or 220 VAC, 50 Hz.
following products are available as examples of IMPATT diodes
Stabilized IMPATT diode Oscillators CIDO series.
IMPATT Power Sources IPSP series.
Active Frequency Multipliers IAFM series.
and CW IMPATT Injection-Locked Amplifiers IILAP and IILA
Controlled IMPATT Oscillators VCIO series.